FIB/TEM observation of defect structure underneath an indentation in silicon

被引：7

作者：

Shimatani, A ^{[1
]}

Nango, T ^{[1
]}

Suprijadi ^{[1
]}

Saka, H ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

FUNDAMENTALS OF NANOINDENTATION AND NANOTRIBOLOGY | 1998年 / 522卷

关键词：

D O I：

10.1557/PROC-522-71

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Defect structure beneath and near Vickers indentations made with loads of 10, 25 and 50g in Si has been studied in detail by TEM. Both plan-view and cross-sectional observations have been made. Beneath the 10 and 25g indentations an amorphous phase is formed, but beneath the 50g indentation no amorphous phase is formed.

引用

页码：71 / 76

页数：6