Morphology of the Si-ZnO interface

被引：47

作者：

Meier, U ^{[1
]}

Pettenkofer, C ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 04期

关键词：

photoemission; zincoxide; heterostructure; interfaces;

D O I：

10.1016/j.apsusc.2005.02.039

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

For Si-ZnO heterostructures, prepared by magnetron sputtering, the interface morphology is studied by XPS and UPS. ZnO films On Si(I 1 1) Surfaces (H-termination and 7 x 7) were prepared by magnetron sputtering and metal organic molecular beam epitaxy (MOMBE) and are investigated in well defined deposition steps and the interface properties were studied ill situ. All samples were handled in Situ under ultra high vacuum (UHV) conditions. Up to five different interface phases were detected depending oil ZnO preparation. Beside a SiOx film induced by the sputter process, ZnO and Zn2SiO4 phases are resolved. In addition hydrogen. appearing as Zn-OHx, is found in considerable concentrations in the films. (c) 2005 Elsevier B.V. All rights reserved.

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页码：1139 / 1146

页数：8

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