Determining the band discontinuities of ZnSe/GaAs and ZnMgSSe/GaAs heterojunctions using free electron laser

被引：10

作者：

Nishi, K

Ohyama, H

Suzuki, T

Mitsuyu, T

Tomimasu, T

机构：

[1] Free Electron Laser Res. Inst., Inc., Hirakata, Osaka 573-01

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 16期

关键词：

D O I：

10.1063/1.118948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction band discontinuities of ZnSe/GaAs and ZnMgSSe/GaAs heterojunctions were investigated using the free electron laser (FEL) internal photoemission technique. This technique is based on the photocurrent spectroscopy utilizing the tunability and intense peak power of the FEL operative in the infrared range. We found the conduction band discontinuities of 113 (ZnSe/GaAs) and 180 meV (ZnMgSSe/GaAs). It is suggested that the band gap discontinuity between ZnSe and ZnMgSSe is delta E-c (conduction band): delta E(u)psilon (valence band)=0.45:0.55 at 77 K. (C) 1997 American Institute of Physics.

引用

页码：2171 / 2173

页数：3

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