Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells

被引：24

作者：

Hamp, MJ ^{[1
]}

Cassidy, DT ^{[1
]}

Robinson, BJ ^{[1
]}

Zhao, QC ^{[1
]}

Thompson, DA ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.123110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for quantifying the degree to which the uneven carrier distribution affects the operation of multiple quantum well (MQW) lasers is developed by comparing the net gains of wells in mirror image asymmetric MQW structures. The uneven carrier distribution is found to affect the performance of devices with as few as two quantum wells and decreases the net gain for wells on the n side of a ten quantum well structure by more than a factor of two. (C) 1999 American Institute of Physics. [S0003-6951(99)04405-8].

引用

页码：744 / 746

页数：3

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