Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics

被引：116

作者：

Gordon, RG ^{[1
]}

Becker, J ^{[1
]}

Hausmann, D ^{[1
]}

Suh, S ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

来源：

CHEMISTRY OF MATERIALS | 2001年 / 13卷 / 08期

关键词：

D O I：

10.1021/cm010145k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

New chemical reactions are introduced for the atomic layer deposition of many metal oxide and metal silicate films from metal alkylamide precursors. The results for hafnium and lanthanum oxides and silicates overturn a long-held assumption that bulky reactants necessarily lead to low deposition rates. There is an urgent need for a replacement for silicon dioxide gate electrodes in microelectronics. The new deposition methods furnish a very promising approach to making materials suitable for this important application.

引用

页码：2463 / 2464

页数：2

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