Double quantum dot as detector of spin bias

被引:52
作者
Sun, Qing-feng [1 ,2 ]
Xing, Yanxia [1 ,2 ]
Shen, Shun-Qing [3 ,4 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[4] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1103/PhysRevB.77.195313
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It was proposed that a double quantum dot can be used as a detector of the spin bias. Electron transport through a double quantum dot is theoretically investigated when a pure spin bias is applied on two conducting leads in contact with the quantum dot. It is found that the spin polarization in the left and right dots may be spontaneously induced, while the intradot levels are located within the spin bias window and breaks the left-right symmetry of the two quantum dots. As a result, a large current emerges. For an open external circuit, a charge bias instead of a charge current will be induced at equilibrium, which is believed to be measurable according to the current nanotechnology. This method may provide a practical and whole electrical approach to detect the spin bias (or the spin current) by measuring the charge bias or current in a double quantum dot.
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页数:6
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