Antireflection coated refractory metal matched emitters for use with GaSb thermophotovoltaic generators

被引：30

作者：

Fraas, L ^{[1
]}

Samaras, J ^{[1
]}

Avery, J ^{[1
]}

Minkin, L ^{[1
]}

机构：

[1] JX Crystals Inc, Issaquah, WA 98027 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916059

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

GaSb thermophotovoltaic cells can be combined with infrared emitters to produce electric power. In this application, both power density and efficiency are important. High power density requires a practical target emitter temperature of 1600 degreesK. In order to reach this temperature spectral efficiency becomes extremely important. Radiation with wavelengths greater than 1.8 microns cannot be converted by the GaSb cells; instead, this long wavelength radiation overheats the cells, limiting power density and efficiency. A solution is to use refractory-metal coated emitters, because metals have low emittance at long wavelengths. Further, an antireflection (AR) coating on the metal can enhance the emittance in the cell convertible band. A spectral efficiency of 75% has been demonstrated for an AR coated tungsten emitter and a GaSb cell power density of 1.5 Watts / cm(2) has been measured with an AR coated tungsten emitter operating at 1555 degreesK.

引用

页码：1020 / 1023

页数：4