A fully integrated Ku-band Doherty amplifier MMIC

被引：30

作者：

Campbell, CF ^{[1
]}

机构：

[1] TriQuint Semicond Texas Inc, Dallas, TX 75243 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 03期

关键词：

Doherty amplifier; high-efficiency amplifier; MMIC; pHEMT;

D O I：

10.1109/75.761678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and performance of a fully integrated Ku-band Doherty amplifier monolithic microwave integrated circuit (MMIC) is presented The circuit is implemented in 0.25-mu m pHEMT MMIC technology and demonstrates the feasibility of the Doherty approach at Ku-band frequencies. The fabricated devices achieved a two-tone power-added efficiency of 40% with a corresponding third-order C/I ratio of 24 dBc at 17 GHz, To the author's knowledge this is the first fully integrated pHEMT Doherty amplifier MMIC as well as the first experimental results for a Doherty amplifier at Ku-band reported to date.

引用

页码：114 / 116

页数：3