Native defects and complexes in SiC

被引:23
作者
Bechstedt, F [1 ]
Fissel, A [1 ]
Furthmüller, J [1 ]
Grossner, U [1 ]
Zywietz, A [1 ]
机构
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
关键词
D O I
10.1088/0953-8984/13/40/319
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Prototypical native defects, in particular monovacancies, are studied using ab initio density functional theory and the local spin-density approximation. Several properties such as the energetics, geometry, electronic structure, and spin states are discussed regarding their dependence on the chemical nature, the preparation conditions, and the polytype of the SiC crystal. Consequences of the defects are derived for the doping behaviour, electrical properties, and photoluminescence spectra.
引用
收藏
页码:9027 / 9037
页数:11
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