Improvement of GaN-based laser diode facets by FIB polishing

被引：23

作者：

Mack, MP ^{[1
]}

Via, GD ^{[1
]}

Abare, AC ^{[1
]}

Hansen, M ^{[1
]}

Kozodoy, P ^{[1
]}

Keller, S ^{[1
]}

Speck, JS ^{[1
]}

Mishra, UK ^{[1
]}

Coldren, LA ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn & Mat Dept, Santa Barbara, CA 93106 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 13期

关键词：

D O I：

10.1049/el:19980886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

420 nm metal organic chemical vapour deposition-grown laser diodes were fabricated using Cl-2 reactive ion etching to form the Facet mirrors. The diodes were subsequently tested under pulsed conditions before and after focused ion beam (FIB) polishing. I-th was reduced from 1.75 to 1.08A and the differential quantum efficiency (eta(d)) increased from 1.3% to 2.5% after FIB.

引用

页码：1315 / 1316

页数：2

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