Composite channel HEMTs for millimeter-wave power applications

被引：6

作者：

Chevalier, P ^{[1
]}

Wallart, X ^{[1
]}

Mollot, F ^{[1
]}

Bonte, B ^{[1
]}

Fauquembergue, R ^{[1
]}

机构：

[1] Inst Elect & Microelect Nord, UMR CNRS 9929, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/InP composite channel HEMT is an interesting way to overcome the strong impact ionization in the InGaAs channel which is one of the main limitation of InP based HEMT. We present in this paper an experimental quantification of improvements provided by a composite channel. Using an InGaAs/InP composite channel, device output conductance was reduced from 145 mS/mm to 85 mS/mm, transconductance was enhanced from 1 S/mm to 1.2 S/mm and cut-off frequency f(MAX) increased by 50 %. Influence of the feedback capacitance on RF performance has also been investigated through the comparison of passivated and nonpassivated devices. So, 0.15 mu m gate length InGaAs/InP composite channel HEMT shown an f(T) of 151 GHz and an f(MAX) of 225 GHz. We also present state of the art power performance at 60 GHz of an InGaAs/InP/n+-InP composite channel HEMT which exhibit an output power density of 355 mW/mm, 12% power-added-efficiency (PAE) and 6.2 dB of linear gain.

引用

页码：207 / 210

页数：4