Analysis of current-voltage characteristics of inhomogeneous Schottky diodes at low temperatures

被引：118

作者：

Chand, S ^{[1
]}

Bala, S ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Appl Sci, Hamirpur 177005, Himachal Prades, India

来源：

APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 02期

关键词：

Schottky diodes; Gaussian distribution; numerical simulation; current-voltage characteristics; barrier inhomogeneities;

D O I：

10.1016/j.apsusc.2005.01.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two approaches of Gaussian distribution of barrier heights in inhomogeneous Schottky diodes have been analyzed by comparing the results for consistency between the two. For this the current-voltage characteristics of inhomogeneous Schottky diodes have been generated by using analytically solved thermionic-emission diffusion equation incorporating Gaussian distribution of barrier heights and by direct numerical integration over a barrier height range. The differences in the results obtained in two approaches are discussed and it is shown that the two approaches yield current-voltage characteristics with slightly different features. The discrepancies in the results obtained in two approaches are attributed to the same series resistance assumed for all elementary barriers of the distribution. It is shown that assigning same series resistance to all barrier of the distribution in numerical integration approach causes current saturation at low bias and inhibits intersection of current-voltage curves from being observable which otherwise occurs in the curves obtained using analytical equation. The paper deals with these aspects in details. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：358 / 363

页数：6

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