Growth of carbon nitride using microwave plasma CVD

被引：15

作者：

Sakamoto, Y ^{[1
]}

Takaya, M ^{[1
]}

机构：

[1] Chiba Inst Technol, Fac Engn, Dept Engn Sci & Mech, Narashino, Chiba 2750016, Japan

来源：

THIN SOLID FILMS | 2005年 / 475卷 / 1-2期

关键词：

carbon nitride; microwave; plasma; CVD; DLC; crystalline;

D O I：

10.1016/j.tsf.2004.08.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An investigation was carried out on the effect of the varying CH4 concentration for the synthesis of carbon nitride using microwave plasma CVD from CH4-N-2 gas mixture. Crystalline particles were observed for 1% CH4 concentration. The deposit changed to a film covered with whiskers for 10% CH4 concentration. The composition calculated from the AES spectrum of the deposit at 1% CH4 Concentration indicated a nitrogen concentration of 57.5%. In the XRD pattern of the deposit at 1% CH4 concentration, the peaks of alpha-C3N4 (301), (401) planes were observed. No Raman peak of carbon was observed in Raman spectrum of the deposit for 1% CH4 concentration. C-N and C-N bonded structures were observed in the XPS spectra. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：198 / 201

页数：4