Towards a unified advanced CD-SEM specification for sub-0.18 μm technology

被引：11

作者：

Allgair, J ^{[1
]}

Archie, C ^{[1
]}

Banke, B ^{[1
]}

Bogardus, H ^{[1
]}

Griffith, J ^{[1
]}

Marchman, H ^{[1
]}

Postek, MT ^{[1
]}

Saraf, L ^{[1
]}

Schlesinger, J ^{[1
]}

Singh, B ^{[1
]}

Sullivan, N ^{[1
]}

Trimble, L ^{[1
]}

Vladar, A ^{[1
]}

Yanof, A ^{[1
]}

机构：

[1] Motorola Inc, Austin, TX 78721 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XII | 1998年 / 3332卷

关键词：

scanning electron microscope; critical dimension; specification; metrology; precision; matching; charging; contamination; pattern recognition; accuracy;

D O I：

10.1117/12.308724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stringent critical dimension control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope specification in the interests of providing a unified criterion of performance and testing. The specification is grounded on standard definitions and strong principles of metrology. The current revision is to be published as a SEMATECH document. A new revision, now in progress, will embody the consensus of a vendor/user conference.

引用

页码：138 / 150

页数：13