An electrical study of a thin film poly(o-methoxyaniline) field effect transitor

被引：9

作者：

Bianchi, RF ^{[1
]}

Onmori, RK

Goncalves, D

de Andrade, AM

Faria, RM

Irene, EA

机构：

[1] Univ Sao Paulo, Inst Fis Sao Carlos, Sao Carlos, Brazil

[2] Univ Sao Paulo, Escola Politecn, Sao Paulo, Brazil

[3] Univ N Carolina, Dept Chem, Chapel Hill, NC USA

来源：

SYNTHETIC METALS | 2001年 / 121卷 / 1-3期

关键词：

polyaniline and derivatives; semiconducting films; Shottky barrier;

D O I：

10.1016/S0379-6779(00)01148-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A field-effect transistor (FET) having poly(o-methoxyaniline) (POMA) as the active layer was built on a SiO2-Si substrate which acts as the gate. The POMA layer was deposited by spin coating on the substrate interdigitated with gold lines and which acts either as the source or drain contact. A tentative theoretical model based on the Schottky gold/polymer interface contact and on the electronic properties of the POMA film was developed to explain the characteristic behavior of the FET device.

引用

页码：1687 / 1688

页数：2

共 6 条

[1] NEW SEMICONDUCTOR-DEVICE PHYSICS IN POLYMER DIODES AND TRANSISTORS [J].

BURROUGHES, JH ;

JONES, CA ;

FRIEND, RH .

NATURE, 1988, 335 (6186) :137-141

[2] Poly(o-methoxyaniline): solubility, deprotonation-protonation process in solution and cast films [J].

Goncalves, D ;

dosSantos, DS ;

Mattoso, LHC ;

Karasz, FE ;

Akcelrud, L ;

Faria, RM .

SYNTHETIC METALS, 1997, 90 (01) :5-11

[3] Field effect transistor using poly(o-metoxyaniline) films [J].

Graeff, CFO ;

Onmori, RK ;

Guimaraes, FEG ;

Faria, RM .

SYNTHETIC METALS, 1999, 105 (03) :151-153

[4] Transport of holes in uniformly and non-uniformly protonated poly(o-methoxyaniline) [J].

Mergulhao, S ;

Faria, RM ;

Ferreira, GFL ;

Sworakowski, J .

CHEMICAL PHYSICS LETTERS, 1997, 269 (5-6) :489-493

[5]

PALOHEIMO J, 1991, LOWER DIMENSIONAL SY, P635

[6]

POPE M, 1999, ELECT PROCESSES ORGA, P1182

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