In-line monitoring of advanced microelectronic processes using combined X-ray techniques

被引：18

作者：

Wyon, C

Delille, D

Gonchond, JP

Heider, F

Kwakman, L

Marthon, S

Mazor, I

Michallet, A

Muyard, D

Perino-Gallice, L

Royer, JC

Tokar, A

机构：

[1] CEA, LETI, DTS, SMEC, F-38926 Grenoble 9, France

[2] Philips Semicond, Crolles, France

[3] STMicroelectronics, Crolles, France

[4] Infineon Technol, Villach, Austria

来源：

THIN SOLID FILMS | 2004年 / 450卷 / 01期

关键词：

microelectronic; X-ray reflectivity; X-ray fluorescence; copper interconnects; high kappa; low kappa;

D O I：

10.1016/j.tsf.2003.10.159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Accurate and reliable in-line monitoring of the different films thickness that occur throughout the integrated circuit manufacturing process is mandatory to develop and produce advanced microelectronic devices. X-ray reflectivity (XRR) is a fundamental and suitable metrology technique to precisely determine the thickness of both transparent and metallic thin films. Furthermore, XRR is very sensitive to surface and interface roughness, and also provides information about the film density. X-ray fluorescence (XRF) is currently used as a metrology technique to control the thickness and the elemental composition of relatively thick films. The performance of a new in-line metrology tool, which gathers XRR and XRF data to monitor film thickness, has been assessed. Results on the monitoring of high kappa thin films, low kappa materials, copper barrier and copper seed layers are presented. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：84 / 89

页数：6