Electron beam lithography in passivated gold nanoclusters

被引：14

作者：

Bedson, TR

Palmer, RE ^{[1
]}

Wilcoxon, JP

机构：

[1] Nanoscale Phys Res Lab, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Birmingham B15 2TT, W Midlands, England

[3] Sandia Natl Labs, Nanostruct & Adv Mat Dept, Albuquerque, NM 87185 USA

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

基金：

英国工程与自然科学研究理事会;

关键词：

electron beam lithography; direct writing; passivated metal clusters;

D O I：

10.1016/S0167-9317(01)00562-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have employed thin films of passivated gold nanoclusters, deposited from solution onto a range of surfaces (graphite, silicon, thermally grown silicon dioxide and sputtered silicon dioxide), as a negative tone electron beam resists. The best resolution achieved to date is 26 nm. Response curves obtained for monolayer films on the SiO2 surfaces indicate that the sensitivity depends on the substrate, attributed to backscattering of the primary beam (and secondary electron generation), as confirmed by Monte Carlo simulations. (C) 2001 Elsevier Science BY All rights reserved.

引用

页码：837 / 841

页数：5

共 18 条

[1] Direct electron beam writing of nanostructures using passivated gold clusters [J].