Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates

被引:1282
作者
Suk, Ji Won [1 ]
Kitt, Alexander [2 ,3 ,4 ]
Magnuson, Carl W. [1 ]
Hao, Yufeng [1 ]
Ahmed, Samir
An, Jinho [1 ]
Swan, Anna K. [2 ,3 ,4 ]
Goldberg, Bennett B. [2 ,3 ,4 ]
Ruoff, Rodney S. [1 ]
机构
[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA
[2] Boston Univ, Dept Phys, Photon Ctr, Boston, MA 02215 USA
[3] Boston Univ, Dept Elect & Comp Engn, Photon Ctr, Boston, MA 02215 USA
[4] Boston Univ, Ctr Nanosci & Nanobiotechnol, Boston, MA 02215 USA
基金
美国国家科学基金会;
关键词
graphene; transfer; membranes; transparent conductive films; Raman spectroscopy; SINGLE-LAYER GRAPHENE; ELASTIC PROPERTIES; HIGH-QUALITY; CARBON; FILMS; MEMBRANES; GRAPHITE; SHEETS; SURFACE; NICKEL;
D O I
10.1021/nn201207c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Reproducible dry and wet transfer techniques were developed to improve the transfer of large-area monolayer graphene grown on copper foils by chemical vapor deposition (CVD). The techniques reported here allow transfer onto three different classes of substrates: substrates covered with shallow depressions, perforated substrates, and flat substrates. A novel dry, transfer technique was used to make graphene-sealed microchambers without trapping-liquid inside. The dry transfer technique utilizes a polydimethylsiloxane frame that attaches to the poly(methyl methacrylate) spun over the graphene film, and the monolayer graphene was transferred onto shallow depressions with 300 nm depth. The improved wet transfer onto perforated substrates with 2.7 mu m diameter holes yields 98% coverage of holes covered with continuous films, allowing the ready use of Raman spectroscopy and transmission electron microscopy to study the intrinsic properties of CVD-grown monolayer graphene. Additionally, monolayer graphene transferred onto flat substrates has fewer cracks and tears, as well as lower sheet resistance than previous transfer techniques. Monolayer graphene films transferred onto glass had a sheet resistance of similar to 980 Omega/sq and a transmittance of 97.6%. These transfer techniques open up possibilities for the fabrication of various graphene devices with unique configurations and enhanced performance.
引用
收藏
页码:6916 / 6924
页数:9
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