Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition

被引：74

作者：

Fang, L ^{[1
]}

Shen, MR ^{[1
]}

机构：

[1] Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China

来源：

THIN SOLID FILMS | 2003年 / 440卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

dielectric properties; structural properties; laser ablation; deposition process;

D O I：

10.1016/S0040-6090(03)00825-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CaCu3Ti4O12 (CCTO) thin films were successfully deposited on Pt/Ti/SiO2/Si(1 0 0) substrates using pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CCTO thin films were greatly affected by the substrate temperature and oxygen pressure. Thin films with a (2 2 0) preferential orientation were obtained at the substrate temperature above 700 degreesC and oxygen pressure above 13.3 Pa. The 480-nm thin films deposited under 720 degreesC and 26.6 Pa have a fairly high dielectric constant of near 2000 at 10 kHz and room temperature. The values of the dielectric constant and loss and their temperature-dependence under different frequency are comparable with those obtained in the epitaxial CCTO films grown on oxide substrates. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：60 / 65

页数：6

共 22 条

[1]

Adams TB, 2002, ADV MATER, V14, P1321, DOI 10.1002/1521-4095(20020916)14:18<1321::AID-ADMA1321>3.0.CO

[2]

2-P

[3] High-resolution x-ray reflectivity study of thin layered Pt-electrodes for integrated ferroelectric devices [J].