Origin of the interface dipole at interfaces between undoped organic semiconductors and metals

被引：74

作者：

Knupfer, M ^{[1
]}

Paasch, G ^{[1
]}

机构：

[1] Leibniz Inst Festkorper & Werkstofforsch Dresden, D-01171 Dresden, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

关键词：

D O I：

10.1116/1.1885021

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Interfaces between metals and intrinsic organic semiconductors are often characterized by the presence of a relatively large interface dipole confined to a narrow interfacial layer. Different potential contributions to this interface dipole are discussed. (c) 2005 American Vacuum Society.

引用

页码：1072 / 1077

页数：6

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