Uniformity optimization of the electromechanical coupling coefficient in AlN based bulk acoustic wave resonators

被引：2

作者：

Lanz, R. ^{[1
]}

Senn, L. ^{[1
]}

Gabathuler, L. ^{[1
]}

Huiskamp, W. ^{[2
]}

Strijbos, R. C. ^{[2
]}

Vanhelmont, F. ^{[2
]}

机构：

[1] Oerlikon Balzers AG, Balzers, Liechtenstein

[2] NXP Semiconductors, Nijmegen, Netherlands

来源：

2007 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1-6 | 2007年

关键词：

electromechanical coupling coefficient; BAW; AlN; distribution; optimization; production yield; volume manufacturing;

D O I：

10.1109/ULTSYM.2007.359

中图分类号：

O42 [声学];

学科分类号：

070206 [声学]; 082403 [水声工程];

摘要：

High yield bulk acoustic wave (BAW) device manufacturing is a challenge: properties of all films in a complex film stack need to be optimized. The commonly used piezoelectric AlN is one of the central films. Key parameters for this film are best possible uniformity of following physical parameters: acoustic thickness, electromechanical coupling coefficient and mechanical quality factor. This paper Investigates possible causes for observed non-uniformity of the coupling coefficient. Such non-uniformities reduce the production yield in BAW volume manufacturing.

引用

页码：1429 / +

页数：2

共 7 条

[1]

[Anonymous], 2007, P 3 INT S AC WAV DEV

[2]

Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films [J].

Bjurström, J ;

Rosén, D ;

Katardjiev, I ;

Yanchev, VM ;

Petrov, I .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2004, 51 (10) :1347-1353

[3]

LANZ R, 2005 IEEE INT ULTR S, P210

[4]

LANZ R, 2007, P 9 INT S SPUTT PLAS

[5]

LANZ R, 2006 IEEE INT ULTR S, P1481

[6]

Thickness dependence of the properties of highly c-axis textured AlN thin films [J].

Martin, F ;

Muralt, P ;

Dubois, MA ;

Pezous, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (02) :361-365

[7]

STRIJBOS R, 2007, P 57 EL COMP TECHN C, P169

← 1 →