Experiments on anisotropic etching of Si in TMAH

被引：69

作者：

You, JS

Kim, D

Huh, JY

Park, HJ

Pak, JJ

Kang, CS

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Kwanak Ku, Seoul 151742, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[3] Korea Univ, Sch Elect Engn, Sungbuk Ku, Seoul 136701, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

关键词：

TMAH; anisotropic etching; reflectance; inverted pyramids; random pyramids;

D O I：

10.1016/S0927-0248(00)00156-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Recently, TMAH has been widely studied due to its MOS compatibility, nontoxic, and good anisotropic etching characteristics. In this work, TMAH etching of Si was carried out at different temperatures (70 degreesC, 80 degreesC and 90 degreesC) and concentrations (5, 15 and 25 wt%). From a patterned Si wafer, inverted pyramids with smooth surface and sharp pyramid vertices were obtained. Uniform random pyramids were obtained from a bare Si wafer, and optimum reflectanceas low as 0.2% was obtained by near normal incident reflectivity measurement. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：37 / 44

页数：8

共 7 条

[1] Characterisation of pyramid formation arising from the TMAH etching of silicon [J].