Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures

被引：25

作者：

Blonkowski, S. ^{[1
]}

机构：

[1] STMicroelect, F-38926 Crolles, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期

关键词：

D O I：

10.1063/1.2800291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An analytical model for the electric field and temperature dependence of the nonlinear dielectric susceptibility of amorphous oxides is developed and compared with experimental measurements on metal-insulator-metal capacitors. Using the model, experimental capacitance variations with applied field, as well as temperature, are tied to an increase in system entropy due to thermal expansion of the lattice. In addition, our model explains the CV-curve sign reversal (slope of the capacitance versus voltage curve) that is frequently seen for metal oxide versus SiO2 capacitors. (C) 2007 American Institute of Physics.

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页数：3

相关论文

共 23 条

[1] Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics [J].

Babcock, JA ;

Balster, SG ;

Pinto, A ;

Dirnecker, C ;

Steinmann, P ;

Jumpertz, R ;

El-Kareh, B .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) :230-232

[2] Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides -: art. no. 052902 [J].

Bécu, S ;

Crémer, S ;

Autran, JL .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

[3] Characterization and modeling of Al2O3 MIM capacitors:: temperature and electrical field effects [J].

Bécu, S ;

Crémer, S ;

Noblanc, O ;

Autran, JL ;

Delpech, P .

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, :265-268

[4] Investigation and modeling of the electrical properties of metal-oxide-metal structures formed from chemical vapor deposited Ta2O5 films [J].

Blonkowski, S ;

Regache, M ;

Halimaoui, A .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1501-1508

[5]

BLONKOWSKI S, UNPUB

[6]

BLONKOWSKI S, 2006, UNPUB INTERNAL CEA L

[7] Electrical properties in low temperature range (5 K-300 K) of tantalum oxide dielectric MIM capacitors [J].

Deloffre, E ;

Montès, L ;

Ghibaudo, G ;

Bruyère, S ;

Blonkowski, S ;

Bécu, S ;

Gros-Jean, M ;

Crémer, S .

MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) :925-928

[8] Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors [J].

Durand, C. ;

Vallee, C. ;

Dubourdieu, C. ;

Kahn, M. ;

Derivaz, M. ;

Blonkowski, S. ;

Jalabert, D. ;

Hollinger, P. ;

Fang, Q. ;

Boyd, I. W. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03) :459-466

[9] Metal-insulator-metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition [J].

Durand, C ;

Vallée, C ;

Loup, V ;

Salicio, O ;

Dubourdieu, C ;

Blonkowski, S ;

Bonvalot, M ;

Holliger, P ;

Joubert, O .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03) :655-660

[10]

FEI Y, 1995, THERMAL EXPANSION HD, V2, P29