Low voltage power devices for future VRM

被引：16

作者：

Huang, AQ ^{[1
]}

Sun, NX ^{[1
]}

Zhang, B ^{[1
]}

Zhou, XW ^{[1
]}

Lee, FC ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Virginia Power Elect Ctr, Blacksburg, VA 24061 USA

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a fully depleted LDD MOSFET built on Silicon-on-Oxide is proposed as a candidate device for future VRM, which is expected to work at multi megahertz.

引用

页码：395 / 398

页数：4