Ballistic transport and boundary scattering in InSb/In1-xAlxSb mesoscopic devices

被引：19

作者：

Gilbertson, A. M. ^{[1
]}

Fearn, M. ^{[2
]}

Kormanyos, A. ^{[3
]}

Read, D. E. ^{[1
]}

Lambert, C. J. ^{[3
]}

Emeny, M. T. ^{[2
]}

Ashley, T. ^{[2
]}

Solin, S. A. ^{[1
,4
,5
]}

Cohen, L. F. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

[2] QinetiQ, Malvern WR14 3PS, Worcs, England

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[4] Washington Univ, Ctr Mat Innovat, St Louis, MO 63130 USA

[5] Washington Univ, Dept Phys, St Louis, MO 63130 USA

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

QUANTUM WIRES; MAGNETORESISTANCE; ANOMALIES; CHANNELS; COLLIMATION; RESISTANCE; INAS/ALSB; INSB;

D O I：

10.1103/PhysRevB.83.075304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the influence of hard-wall confinement and lateral dimension on the low-temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/In1-xAlxSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

引用

页数：10

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