Magic islands in Si/Si(111) homoepitaxy

被引：90

作者：

Voigtlander, B

Kastner, M

Smilauer, P

机构：

[1] Forschungszentrum Julich, Inst Grenzflachenforsch & Vakuumphys, D-52425 Julich, Germany

[2] Acad Sci Czech Republic, Inst Phys, Prague 16253 6, Czech Republic

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.81.858

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The island size distribution after submonolayer deposition of Si on Si(111) exhibits pronounced peaks of magic sizes. Scanning tunneling microscopy studies during growth enable us to study directly the influence of surface reconstructions on growth kinetics. Lateral growth of rows of the width of the 7 x 7 reconstruction unit cell leads to kinetic stabilization of magic islands. Monte Carlo calculations are performed that reproduce the main experimental results and make it possible to estimate important energy barriers.

引用

页码：858 / 861

页数：4

共 14 条

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BARTELT MC, 1996, PHYS REV B, V54

[2]

FOLL H, 1979, PHILOS MAG A, V40, P497, DOI 10.1080/01418617908234855

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