High mobility single-crystal field-effect transistors from bisindoloquinoline semiconductors
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作者:
Ahmed, Eilaf
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Univ Washington, Dept Chem, Seattle, WA 98195 USAUniv Washington, Dept Chem, Seattle, WA 98195 USA
Ahmed, Eilaf
[1
]
Briseno, Alejandro L.
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Univ Washington, Dept Chem, Seattle, WA 98195 USAUniv Washington, Dept Chem, Seattle, WA 98195 USA
Briseno, Alejandro L.
[1
]
Xia, Younan
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Univ Washington, Dept Chem, Seattle, WA 98195 USAUniv Washington, Dept Chem, Seattle, WA 98195 USA
Xia, Younan
[1
]
Jenekhe, Samson A.
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Univ Washington, Dept Chem, Seattle, WA 98195 USA
Univ Washington, Dept Chem Engn, Seattle, WA 98195 USAUniv Washington, Dept Chem, Seattle, WA 98195 USA
Jenekhe, Samson A.
[1
,2
]
机构:
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[2] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA
A novel heptacyclic bisindoloquinoline-based organic semiconductor has been synthesized, characterized, and used to fabricate single-crystal field-effect transistors. A synthetic route was developed for the synthesis of heptacyclic bis(indolo(1,2-a))quinoline via an intramolecular cyclization of anthrazoline derivatives. Single-crystal X-ray structure revealed that the seven fused rings of bis(indolo(1,2-a))quinoline are relatively coplanar and lead to slipped face-to-face stacking with the shortest intermolecular spacing of 3.3 angstrom. Single-crystal field-effect transistors based on the bis(indolo(1,2-a))quinoline had carrier mobility as high as 1.0 cm(2)/V s with on/off ratios greater than 10(4).