Dielectric properties of A- and B-site-doped BaTiO3(I):: La- and Al-doped solid solutions -: art. no. 074105

被引:63
作者
Bobade, SM [1 ]
Gulwade, DD [1 ]
Kulkarni, AR [1 ]
Gopalan, P [1 ]
机构
[1] Indian Inst Technol, Dept Met Engn & Mat Sci, Bombay 400076, Maharashtra, India
关键词
D O I
10.1063/1.1879074
中图分类号
O59 [应用物理学];
学科分类号
摘要
Extremely small amounts of La and Al doping on the A and B site of BaTiO3, respectively, resulting in a solid solution of the type Ba1-3xLa2xTi1-3xAl4xO3 have been investigated. The compositions have been prepared by the Pechini process. The x-ray diffraction (XRD) reveals the presence of tetragonal (P4/mmm) phase. The XRD data has been analyzed using FULLPROF, a Rietveld refinement package. The compositions have been characterized by dielectric spectroscopy between room temperature and 200 degrees C. The resulting compounds (0 <= x <= 0.008) exhibit a remarkable decrease in the Curie temperature as well as a significant enhancement of the dielectric constant. (C) 2005 American Institute of Physics.
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页数:7
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