Comparison of PECVD-WNx and CVD-TiN films for the upper electrode of Ta2O5 capacitors

被引：3

作者：

Park, BL ^{[1
]}

Lee, MB ^{[1
]}

Moon, KJ ^{[1
]}

Lee, HD ^{[1
]}

Kang, HK ^{[1
]}

Lee, MY ^{[1
]}

机构：

[1] Samsung Elect Co LTD, Semicond R&D Ctr, Proc Dev Grp 3, Kyungki Do 449900, South Korea

来源：

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 1998年

关键词：

D O I：

10.1109/IITC.1998.704761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics of PECVD-WNx and CVD-TiN films as the upper electrode for Ta2O5 capacitors were compared in 3-dimensional stack structure. In an aspect of step coverage, CVD-TiN shows excellent result of about 90% at the corner of stack structure, but PECVD-WNx of about 50%. However, WNx electrode even with 100 Angstrom-thickness exhibits equivalent capacitance and leakage current compared with 150 Angstrom-thick CVD-TiN electrode. It is demonstrated that PECVD-WNx as well as CVD-TiN is a good candidate as an upper electrode for Ta2O5 capacitors of ULSI DRAMs.

引用

页码：96 / 98

页数：3