A comparative study of the physical properties of CdS, Bi2S3 and composite CdS-Bi2S3 thin films for photosensor application

被引：45

作者：

Ahire, R. R.

Deshpande, N. G.

Gudage, Y. G.

Sagade, A. A.

Chavhan, S. D.

Phase, D. M.

Sharma, Ramphal ^{[1
]}

机构：

[1] Dr Babasaheb Ambedkar Marathwada Univ, Dept Phys, Thin Film & Nanotechnol Lab, Aurangabad 431004, Maharashtra, India

[2] UGC DAE, Consortium Sci Res Ctr Facil, Indore 452017, Madhya Pradesh, India

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2007年 / 140卷 / 02期

关键词：

cadmium sulphide; bismuth sulphide; composite thin films; photosensitivity; spectral response;

D O I：

10.1016/j.sna.2007.06.039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of CdS, Bi2S3 and composite CdS-Bi2S3 have been deposited using modified chemical bath deposition (M-CBD) technique. The various preparative parameters were optimized to obtain good quality thin films. The as-deposited films of CdS, Bi2S3 and composite were annealed in Ar gas at 573 K for I h. A comparative study was made for as-deposited and annealed CdS, 1303 and composite thin films. Annealing showed no change in crystal structure of these as-deposited films. However, an enhancement in grain size was observed by AFM studies. In addition change in band gap with annealing was seen. A study of spectral response, photosensitivity showed that the films can be used as a photosensor. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：207 / 214

页数：8

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