Room-temperature growth of epitaxial (111)Fe3O4 films with conductive Cu underlayer -: art. no. 10C311

被引:16
作者
Huang, PH [1 ]
Lai, CH
Huang, RT
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
关键词
D O I
10.1063/1.1854453
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial (111) Fe3O4 film on the Cu underlayer was obtained by using reactive ion-beam sputtering with high incident energy at room temperature. X-ray phi scans and transmission electron microscope diffraction pattern revealed unusual 12-fold symmetry of the (111) Fe3O4 films on Cu (001) underlayers due to the presence of two kinds of epitaxial (111) grains in Fe3O4 films. The saturation magnetization of the 70 nm thick (111) Fe3O4 films is 291 emu/cm(3). A clear Verwey transition of Fe3O4 films was observed around 116 K. The root-mean-square roughness of the Fe3O4 surface is only 3.5 angstrom. (c) 2005 American Institute of Physics.
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