Formation of SiGe source drain using Ge implantation for floating-body effect resistant SOI MOSFETs

被引：9

作者：

Nishiyama, A ^{[1
]}

Arisumi, O ^{[1
]}

Terauchi, M ^{[1
]}

Takeno, S ^{[1
]}

Suzuki, K ^{[1
]}

Takakuwa, C ^{[1
]}

Yoshimi, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD,RES & DEV CTR,ENVIRONM ENGN LAB,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

SOI MOSFET; floating-body effect; SiGe; germanium; implantation; RBS; photoluminescence; bandgap;

D O I：

10.1143/JJAP.35.954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe was formed by Ge implantation into silicon on insulator (SOI) substrates with the dosage range from 0.5 to 3 x 10(16) cm(-2) and subsequent annealing in N-2. The implantation dosage dependence of the crystalline quality bandgap and sheet resistance of the SiGe layers are investigated. The implantation damage for Ge dosage up to 1 x 10(16) cm(-2) can be removed at a temperature as low as 700 degrees C. A SiGe crystalline network is formed by the annealing at the same time. With a Ge dosage of 1 x 10(16) cm(-2) or more, bandgap narrowing of the SiGe layer was detected. Sheet resistances of SiGe N+ and P+ layers gradually increase for higher Ge dosage. SOI MOSFET characteristics in terms of the floating-body effect with the SiGe source/drain layers are presented. The bandgap narrowing suppresses the floating-body effect of fully depleted SOI MOSFETs, while maintaining the reverse leakage current of the p-n junction between the source/drain and channel at a low level.

引用

页码：954 / 959

页数：6

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