Infrared difference frequency generation with quasi-phase-matched GaAs

被引：17

作者：

Lallier, E ^{[1
]}

Becouarn, L ^{[1
]}

Brevignon, M ^{[1
]}

Lehoux, J ^{[1
]}

机构：

[1] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 16期

关键词：

D O I：

10.1049/el:19981143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report infrared difference-frequency generation in a high transmission diffusion-bonded GaAs stack. Using an LiNbO3 optical parametric oscillator as the pump source, a conversion efficiency of 3.4 x 10(-4), output energy of 2 mu J and 180W peak power were obtained at 11.35 mu m.

引用

收藏

页码：1609 / 1611

页数：3

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