Alternative back contact materials for thin film Cu(In,Ga)Se2 solar cells

被引:181
作者
Orgassa, K [1 ]
Schock, HW [1 ]
Werner, JH [1 ]
机构
[1] Univ Stuttgart, Inst Phys Elect, D-70569 Stuttgart, Germany
关键词
CuInSe2; CIGS; back contact; optical losses;
D O I
10.1016/S0040-6090(03)00257-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We fabricate Cu(In,Ga)Se-2 thin film solar cells with a variety of different back contact metals (W, Mo, Cr, Ta, Nb, V, Ti, Mn) on glass substrates. A compositional analysis of absorber layers on the metallized substrates identifies W, Mo, Ta and Nb as being inert during the Cu(In,Ga)Se-2 deposition. We investigate solar cells with decreasing absorber thickness, focussing on the increasing influence of the back contact as an optical reflector. The best device efficiencies obtained are 14.2% on W, 13.8% on Mo, 13.3% on Ta, 10% on Nb, 5.9% on Cr and 3.4% on V For Ta and Nb, a Ga-grading at the back side improves the passivation of the absorber/back contact interface. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:387 / 391
页数:5
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