Preparation of thin films of dielectric materials using high-density ablation plasma produced by intense pulsed ion beam

被引：17

作者：

Yatsui, K ^{[1
]}

Sonegawa, T ^{[1
]}

Ohtomo, K ^{[1
]}

Jiang, WH ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Lab Beam Technol, Nagaoka, Niigata 9402188, Japan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期

关键词：

thin films; high density plasma; ablation; pulse; ion beam evaporation; dielectric materials;

D O I：

10.1016/S0254-0584(98)00030-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

By use of a high-density ablation plasma produced by the interaction of an intense pulsed light-ion beam with a solid target, the preparation of thin films has been successfully demonstrated, and is called ion beam evaporation (IBE). In addition to a standard front-side deposition of thin films (FS/IBE), significant improvement of the films has been achieved with much better morphology as well as electrical properties by back-side deposition (BS /IBE). In the BS/IBE configuration, the substrate is placed on the reverse side of the target holder, being free from droplets sometimes observed by the FS/IBE. Using BaTiO3, (Ba-0.5, Sr-0.5) TiO3 and SrTiO3 targets, experimental results are presented in detail on the preparation of these thin films by the BS/IBE. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：219 / 223

页数：5

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