Enhanced piezoelectric properties of potassium niobate single crystals with fine engineered domain configurations

被引：15

作者：

Wada, S

Muraoka, K

Kakemoto, H

Tsurumi, T

Kumagai, H

机构：

[1] Tokyo Inst Technol, Dept Met & Ceram Sci, Tokyo 1528552, Japan

[2] Asahi Techno Glass, Chiba 2730044, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 120卷 / 1-3期

关键词：

domain engineering; potassium niobate; single crystals; engineered domain configurations;

D O I：

10.1016/j.mseb.2005.02.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Potassium niobate (KNbO3) single crystals were grown by a top seed solution growth (TSSG) method. At first, the electric field was applied along [0 0 1](c) (cubic notification system) direction of KNbO3 crystals to induce the engineered domain configurations into KNbO3 crystals. Prior to domain engineering, the piezoelectric properties of [0 0 1](c) oriented KNbO3 single-domain crystals were measured. These measured values were completely consistent with the calculated apparent d(31) and d(32). Finally, the engineered domain configurations were induced into KNbO3 crystals. As a result, piezoelectric properties increased with decreasing domain sizes of the engineered domain configuration. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：186 / 189

页数：4

共 17 条

[1] PERMISSIBLE DOMAIN WALLS IN FERROELECTRIC SPECIES [J].