Visualization of localized holes in manganite thin films with atomic resolution

被引:51
作者
Ma, JX
Gillaspie, DT
Plummer, EW
Shen, J [1 ]
机构
[1] Oak Ridge Natl Lab, Condensed Matter Sci Div, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
关键词
D O I
10.1103/PhysRevLett.95.237210
中图分类号
O4 [物理学];
学科分类号
0702 [物理学];
摘要
The magnetic and transport behaviors of manganites are critically related to the spatial distribution and correlation of doped holes. Using in situ scanning tunneling microscopy, we have imaged both occupied and unoccupied states simultaneously in a hole-doped (La5/8-0.3Pr0.3)Ca3/8MnO3 epitaxial thin film grown by laser molecular beam epitaxy. Doped holes localized on Mn4+ ion sites were directly observed with atomic resolution in the paramagnetic state at room temperature. In contrast to a random distribution, these doped holes show strong short-range correlation and clear preference of forming nanoscale CE-type charge-order-like clusters. The results provide direct visualization of the nature of intriguing electronic inhomogeneity in transition metal oxides.
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页数:4
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