Electrical properties of MOCVD praseodymium oxide based MOS structures

被引：7

作者：

Lo Nigro, R ^{[1
]}

Toro, R ^{[1
]}

Malandrino, G ^{[1
]}

Raineri, V ^{[1
]}

Fragalà, IL ^{[1
]}

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Prascodymium oxide-based high k dielectric thin films grown by metal-organic chemical vapour deposition (MOCVD) at 750degreesC on p-type Si (100) substrate have been proposed. It has been revealed by energy-filtered TEM analyses that depositions in 10(-3) torr oxygen partial pressure produced Pr2O3 and a (PrnO2n-2SiO2)-Si-. bottom layer. The electrical properties of both Pr2O3/(PrnO2n-2SiO2)-Si-. structures and (PrnO2n-2SiO2)-Si-. thin layer have been investigated and compared.

引用

页码：375 / 378

页数：4

共 10 条

[1] Structural and electrical quality of the high-k dielectric Y2O3 on Si (001):: Dependence on growth parameters [J].