Electrostatic modeling and ESD damage of magnetoresistive sensors

被引:19
作者
Wallash, AJ
机构
[1] IBM Storage Systems Division, San Jose
关键词
D O I
10.1109/20.477549
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The response of a thin-film sensor to the excessive current and/or voltage during an electrostatic discharge (ESD) event is studied. An unshielded magnetoresistive (MR)-like recording head structure is analyzed and modeled from the viewpoint of electrostatic theory. An electrical model for the MR head structure is proposed and used in circuit simulations to study the current flow through the thin-film resistor during a Human Body Model ESD transient. A thermal model for the thin-film resistor burnout is compared with experiment and 2D modeling of the fields and voltages are presented. Finally, Maxwell's method is used to calculate the induced charge on the MR structure when a charged external conductor is present.
引用
收藏
页码:49 / 53
页数:5
相关论文
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