Three-aspherical mirror system for EUV lithography

被引：21

作者：

Kinoshita, H ^{[1
]}

Watanabe, T ^{[1
]}

Niibe, M ^{[1
]}

Ito, M ^{[1
]}

Oizumi, H ^{[1
]}

Yamanashi, H ^{[1
]}

Murakami, K ^{[1
]}

Oshino, T ^{[1
]}

Platonov, Y ^{[1
]}

Grupido, N ^{[1
]}

机构：

[1] Himeji Inst Technol, Himeji, Hyogo 6712201, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES II | 1998年 / 3331卷

关键词：

EUV lithography; synchrotron radiation; multilayer mirror; aspherical mirror; assembly tolerance;

D O I：

10.1117/12.309580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to investigate industrial applications of synchrotron radiation, Hyogo Prefecture is constructing a synchrotron radiation (SR) ring at the SPring-8 site. It will operate at an electron energy of 1.5 GeV. In September, 1998, the ring will be commissioned when th, SPring-8 injector begins feeding electrons into it. We developed a beamline for EUVL under the industrial applications program. In addition, we are developing a three-aspherical-mirror system for EUVL. The specifications of the exposure tool target the 0.1-mu m generation on the SIA road map. This tool consists of illumination optics, a scanning and alignment mechanism, 3-aspherical-mirror optics, and a load-lock chamber for exchanging wafers. The exposure tool is installed in a thermal chamber located at the end of the beamline. Using this system, we plan to develop a 0.1-mu m process and fabricate MOS devices with feature sizes of 0.1-mu m and below.

引用

页码：20 / 31

页数：12