Room temperature ozone sensing with KI layers integrated in HSGFET gas sensors

被引：19

作者：

Fuchs, A ^{[1
]}

Bogner, M ^{[1
]}

Doll, T ^{[1
]}

Eisele, I ^{[1
]}

机构：

[1] Univ Bundeswehr Munchen, Inst Phys, Fak Elektrotech Eq, D-85577 Neubiberg, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 48卷 / 1-3期

关键词：

ozone; gas sensors; alkali haloids; HSGFET; room temperature; potassium iodide;

D O I：

10.1016/S0925-4005(98)00060-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Hybrid suspended gate FET (HSGFET) with a thin potassium iodide (KI) sensitive layer were proven to be well suited as a reproducible ozone sensor operating at room temperature with an excellent resolution in the low ppb region. The impact of humidity limits the applicability of the sensor to moderate ambient conditions. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：296 / 299

页数：4

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