Wafer level integration of a 24 GHz and 34 GHz differential SiGe-MMIC oscillator with a loop antenna on a BCB membrane

被引：5

作者：

Abele, P ^{[1
]}

Konle, J ^{[1
]}

Behammer, D ^{[1
]}

Sönmez, E ^{[1
]}

Schad, KB ^{[1
]}

Trasser, A ^{[1
]}

Schumacher, H ^{[1
]}

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89069 Ulm, Germany

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The wafer level integration of a 24 GHz and 34 GHz SiGe-MMIC oscillator with buffer amplifier and a loop antenna on a BCB (Benzo Cyclo Butene) membrane is demonstrated. The phase noise of the not integrated 24 GHz and 34 GHz oscillator is -104 dBc/Hz and -88 dBc/Hz at an offset frequency of 1 MHz and the output power was measured to be +1 dBm and -3 dBm, respectively. The radiated power of both integrated systems is determined based on measurements with a horn antenna and discussed.

引用

页码：1033 / 1036

页数：4