Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

被引：100

作者：

Kang, AY ^{[1
]}

Lenahan, PM

Conley, JF

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] Sharp Labs Amer, Camas, WA 98607 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

D O I：

10.1063/1.1621078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O-2(-) defect. A second spectrum is likely due to an Hf+3 related defect. (C) 2003 American Institute of Physics.

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页码：3407 / 3409

页数：3

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