Growth of oxide seed layers on Ni and other technologically interesting metal substrates: Issues related to formation and control of sulfur superstructures for texture optimization

被引:12
作者
Cantoni, C [1 ]
Christen, DK [1 ]
Goyal, A [1 ]
Heatherly, L [1 ]
List, FA [1 ]
Ownby, GW [1 ]
Zehner, DM [1 ]
Christen, HM [1 ]
Rouleau, CM [1 ]
机构
[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
关键词
buffer layers; coated conductors; epitaxial films; metal surface;
D O I
10.1109/TASC.2003.811936
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current carrying capabilities of RABiTS are connected to the crystalline quality of the seed buffer layer and the stability of the metal/seed layer interface. Our study shows that the epitaxial growth of commonly used seed layers on textured Ni is mediated by a sulfur superstructure present on the metal surface. Many structural defects generated during seed layer growth (secondary orientations, in-plane rotation, incomplete cube texture) can be related to the S surface concentration and superstructure coverage. More generally, our results indicate that the epitaxial deposition of several classes of oxides (fluorite, perovskite, RE2O3) on several {100}<100> fee metals depends, in addition to chemical stability and lattice match, on the existence and optimization of S superstructures on the metal surface. On these bases, we discuss issues related to the growth of different oxides on Ni, Ni-alloys; and Pd surfaces having different chemical and structural properties.
引用
收藏
页码:2646 / 2650
页数:5
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