Structural and electrical characterization of processable bis-silylated thiophene oligomers

被引：28

作者：

Barbarella, G

Ostoja, P

Maccagnani, P

Pudova, O

Antolini, L

Casarini, D

Bongini, A

机构：

[1] CNR, LAMEL, ICOCEA, I-40129 Bologna, Italy

[2] Latvian inst Organ Synth, LV-1006 Riga, Latvia

[3] Univ Modena, Dipartimento Chim, I-41100 Modena, Italy

[4] Univ Bologna, Dipartimento Chim Organ, I-40110 Bologna, Italy

[5] Univ Bologna, Dipartimento Chim G Ciamician, I-40126 Bologna, Italy

来源：

CHEMISTRY OF MATERIALS | 1998年 / 10卷 / 11期

关键词：

D O I：

10.1021/cm9804261

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new class of processable, chemically stable, and easily synthesized and purified alpha,omega-bis(dimethyl-tert-butylsilyl) oligothiophenes is described. Information on the solid-state properties was obtained by single crystal X-ray diffraction and CPMAS NMR spectroscopy. Molecular packing was characterized by a sandwich-type organization, with the molecular planes between adjacent layers along the stacking direction being exactly parallel. Vacuum-evaporated thin films of the tetramer, pentamer, and hexamer displayed field effect transistor activity, with charge mobilities increasing with the substrate deposition temperatures in the range 28-80 degrees C. The best FET performance was achieved with the pentamer which was characterized by an on/off ratio > 10(3), reproducibility, and a device stability in air of months.

引用

页码：3683 / 3689

页数：7

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