High voltage Cu(In,Ga)Se2 devices with Ga-profiling fabricated using co-evaporation

被引：9

作者：

Bodegård, M ^{[1
]}

Lundberg, O ^{[1
]}

Malmström, J ^{[1
]}

Stolt, L ^{[1
]}

机构：

[1] Angstrom Solar Ctr, SE-75121 Uppsala, Sweden

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915867

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The influence of bandgap profiling of Cu(In,Ga)Se-2 absorbers for thin film solar cells has been investigated. Profiles have been obtained by depositing CuGaSe2 back surface layers in the beginning of the Cu(In,Ga)Se-2 growth process. Two different concentrations of Ga was used for the non-graded part of the Cu(In,Ga)Se-2 film corresponding to Ga/(Ga+In) ratios of 0.2 and 0.5. The interdiffusion of Ga and In was studied and it was found that, although substantial interdiffusion occurred, a back surface layer with a high Ga content remained as analyzed with SIMS and XRD. The main influence on the solar cell parameters, by widening of the bandgap towards the back contact using this Ga-rich back surface layer, was found to be an enhancement of the efficiency by improved voltage.

引用

页码：450 / 453

页数：4

共 7 条

[1] LIMITING EFFICIENCIES OF IDEAL SINGLE AND MULTIPLE ENERGY-GAP TERRESTRIAL SOLAR-CELLS [J].