0.12-mu m gate III-V nitride HFET's with high contact resistances

被引：54

作者：

Burm, J

Chu, K

Schaff, WJ

Eastman, LF

Khan, MA

Chen, QH

Yang, JW

Shur, MS

机构：

[1] CORNELL UNIV,CORNELL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] APA OPT,BLAINE,MN 55449

[3] RENSSELAER POLYTECH INST,TROY,NY 12180

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.563309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HFET's with 0.12-mu m gate length were fabricated on a III-V nitride wafer, The contact resistance from unannealed Ti/Au ohmic contact was 10 Omega . mm. Even with this relatively high contact resistance, f(T) of 469 GHz and f(max) of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FET's. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 mu m). In addition, the effects of high contact resistances at high frequency are discussed.

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页码：141 / 143

页数：3

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