Spatial distributions of hole traps, and image latency in InSb focal plane arrays

Spatial distributions of hole trap sites on a quasipixel level in InSb arrays for SIRTF are examined. The dependence of flux, fluence, and applied bias on image latency is investigated, and experimental results are presented and discussed. Models of linearity and capacitance are compared with experimental results. We find increasing the depletion width in a light exposed pixel by larger reverse biasing decreases the trapped charge (or latency) in that pixel by factors of similar to3. Assumed pixel geometries lead to an apparent spatial density of active trap sites that falls quickly with distance from the implants.