Valence-band parameters determined by eigen energies in In0.53Ga0.47As/In0.52Al0.48As multi-quantum well structures

被引:2
作者
Tanaka, E [1 ]
Kotera, N [1 ]
Nakamura, H [1 ]
机构
[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Iizuka, Fukuoka 820, Japan
来源
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词
D O I
10.1109/ICIPRM.1998.712599
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Various values of heavy-hole effective: mass and valence-band offset in In(0.53)Ga(0.47)AS/In0.52Al0.48As multi-quantum wells have been reported to date. Determination of parameters is important for application to opto-electronic devices. In this paper, we report the heavy-hole effective mass and the valence-band offset derived from saturation of a eigen energy close to atop of a potential well using the envelope function model.
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页码:545 / 548
页数:4
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