1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS
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1998年
关键词:
D O I:
10.1109/ICIPRM.1998.712599
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Various values of heavy-hole effective: mass and valence-band offset in In(0.53)Ga(0.47)AS/In0.52Al0.48As multi-quantum wells have been reported to date. Determination of parameters is important for application to opto-electronic devices. In this paper, we report the heavy-hole effective mass and the valence-band offset derived from saturation of a eigen energy close to atop of a potential well using the envelope function model.