Exploring capabilities of electrical linewidth measurement (ELM) techniques

被引:1
作者
Rangelov, V
Sarstedt, M
Somerville, J
Marschner, T
Jonckheere, R
Poelaert, A
机构
[1] Infineon Technol AG, D-81739 Munich, Germany
[2] IMEC, B-3001 Louvain, Belgium
关键词
electrical linewidth measurement; critical dimension; metrology; ELM; ECD;
D O I
10.1016/S0167-9317(01)00455-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we have investigated the linearity of the electrical linewidth measurement, and the relation to the linewidth values measured with a CD-SEM. The collected data has shown an almost constant bias between ELM and SEM values tested down to 50 nm. A comparison between poly- and alpha -Si lines with respect to different grain sizes was done. A further point of interest was the influence of the geometry of a line (e.g. straight vs. bent), as well as the dependence of the ELM result with regard to a changing linewidth along its length. An overview of an error analysis for the whole experimental procedure is presented. (C) 2001 Elsevier Science BY All rights reserved.
引用
收藏
页码:673 / 681
页数:9
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